TaC - CVD Tantalum Carbide

Tantalum Carbide (TaC) Coating is a high-performance ceramic coating known for its exceptional hardness, wear resistance, and corrosion resistance. It has hardness close to that of diamond, enabling strong resistance to abrasion, scratching, and chemical attack, making it an ideal solution for extreme operating environments.

Characteristic

High Purity: 99.999%, with a dense coating surface and excellent high-temperature resistance.

Resistance to Acid and Alkali Corrosion: Resistant to hydrogen (H₂), ammonia (NH₃), silane (SiH₄), and silicon (Si), providing reliable protection in harsh chemical environments.

Resistance to Plasma Etching: Resistant to reactive species such as chlorine and bromine, dopants such as boron, phosphorus, and arsenic, as well as corrosive cleaning agents.

Excellent Thermal Shock Resistance and Strong Coating Adhesion.

Parameter

Property Unit Value
Density g/cm³ 14.3
Melting Point °C 3880
Lattice Constant Å 4.454
Hardness (HK) HK 2000
Thermal Conductivity (25°C) W/(m·K) 22–25
Thermal Conductivity (100°C) W/(m·K) 15–18
Thermal Expansion Coefficient K⁻¹ 6.29 × 10⁻⁶
Young’s Modulus GPa 291
Electrical Resistivity Ω·cm 1 × 10⁻⁵

Application field solutions

Key Components for PVT Silicon Carbide Single Crystal Growth

GaN Wafer Carrier: Used to support, hold, and fix GaN wafers. Serves as a wafer base in epitaxial growth (MOCVD/MBE), etching, and deposition processes.

Flow Guide Ring: Directs and controls process gas distribution inside the chamber, optimizing gas flow patterns, eliminating turbulence or local non-uniformity, and ensuring process uniformity.

TaC Coated Graphite Susceptor for MOCVD Epitaxy.

TaC Coated Graphite Heater for MOCVD Equipment.

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