BN - Boron Nitride

It is manufactured by hot-pressing high-purity boron nitride powder. The material maintains stable performance under high-temperature, vacuum, and inert-atmosphere conditions. It also exhibits excellent chemical stability and can be easily precision-machined into various complex geometries for customized applications.

Characteristic

Excellent High-Temperature Resistance

High Thermal Conductivity and Low Thermal Expansion Coefficient

Outstanding Thermal Shock Resistance

Excellent Electrical Insulation at High Temperatures

Good Corrosion Resistance to Molten Metals

Excellent Machinability with Customizable Shapes and Dimensions

Parameter

Property Unit Hexagonal Boron Nitride (h-BN) Cubic Boron Nitride (c-BN)
Crystal Structure Hexagonal layered structure Cubic (zinc blende type)
Density g/cm³ 2.27 3.48
Mohs Hardness 2 (lubricating) Second only to diamond
Flexural Strength (h-BN ceramic) MPa 50–100
Melting / Decomposition Point °C >3000 (decomposes in N₂) >3000
Maximum Service Temperature (Air) °C 900–1000 (oxidation limit) ~1200
Thermal Conductivity (20°C) W/(m·K) 15–30 (⊥c), up to 60 (∥c) 13–20
Thermal Expansion Coefficient K⁻¹ 0.4×10⁻⁶ – 7.5×10⁻⁶ (anisotropic) 2.1×10⁻⁶ – 4.9×10⁻⁶
Volume Resistivity (20°C) Ω·cm >10¹⁴ >10¹⁴
Dielectric Strength kV/mm 30–40
Dielectric Constant (1 MHz) 3.5–5.3 (anisotropic) 4.5–7.1

Application field solutions

Semiconductor Vacuum Equipment: Used for insulating support components, thermal insulation rings, wafer carriers, and insulating shields in epitaxial, PVD, and CVD systems.

Thermal Insulation Applications: Used as insulation parts in GaAs and InP single crystal growth systems, as well as insulating and thermal shielding components for OLED evaporation sources.

High-Temperature Furnaces: Used for vacuum or controlled-atmosphere furnace components such as furnace tubes, crucibles, and boats (boats/trays).

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