AIN - Aluminum Nitride

Aluminum nitride (AlN) is widely used in components requiring efficient heat dissipation and in semiconductor manufacturing equipment due to its excellent thermal conductivity, electrical insulation properties, and a coefficient of thermal expansion close to that of silicon.

Characteristic

High Purity, High Temperature Resistance, and High Mechanical Strength

High Thermal Conductivity and Low Thermal Expansion Coefficient

High Electrical Insulation with Low Dielectric Constant

Excellent Resistance to Corrosion by Molten Metals

Parameter

Property Unit Value
Density g/cm³ 3.3
Mohs Hardness 7–8
Flexural Strength MPa 300–400
Melting Point °C >2200 (decomposes in N₂)
Maximum Service Temperature °C ~1350 (in air)
Thermal Conductivity (20°C) W/(m·K) 140–180
Thermal Expansion Coefficient K⁻¹ 4.5×10⁻⁶ – 5.0×10⁻⁶
Volume Resistivity (20°C) Ω·cm >10¹⁶
Dielectric Strength kV/mm 15–20
Dielectric Constant (1 MHz) 8.5–9.0

Application field solutions

High-Temperature Crucibles: Used for high-temperature melting and sintering processes. They provide excellent resistance to heat and corrosion, preventing material contamination.

IC Packaging Substrates / Heat Sinks: Used for chip packaging heat dissipation and circuit routing. They reduce junction temperature and improve device stability and reliability.

Semiconductor Equipment Components: Used as structural and insulating support parts in high-temperature and vacuum equipment, offering high-temperature resistance and contamination prevention.

High-Power LED Substrates: Used for LED thermal management and electrical insulation. They provide efficient heat dissipation, reduce light decay, and extend device lifespan.

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