Electrostatic Chuck

Manufactured via a multi-layer CVD deposition process, this structure sequentially forms a PBN insulating layer, a pyrolytic graphite conductive layer, and a C-PBN dielectric layer on a graphite substrate, achieving an integrated solution of electrical insulation and conductivity for semiconductor processes. It is a high-purity, high-temperature-resistant, and corrosion-resistant electrostatic holding device used for high-temperature handling and processing of semiconductor wafers and precision materials, ensuring stable chucking without contaminating the samples.

Characteristic

Integrated Heating and Electrostatic Adsorption Function

High Purity up to 5N with Low Impurity Outgassing

High Operating Temperature Capability up to 800°C or Higher

High Voltage Resistance and Stability

Parameter

Property	Unit	Pyrolytic Boron Nitride (PBN)	Alumina (Al₂O₃)	Aluminum Nitride (AlN)
Density	g/cm³	2.1	3.8	3.2
Purity	%	99.999	99.8	98
Flexural Strength	MPa	244	350	400
Thermal Conductivity	W/(m·K)	82 (a-axis), 2.4 (c-axis)	20	170
Thermal Expansion Coefficient	×10⁻⁶ K⁻¹	2.4 (a-axis), 27 (c-axis)	6.9	4.6
Volume Resistivity	Ω·cm	3.6×10¹⁶	1×10¹⁴	1.5×10¹³
Dielectric Strength	kV/mm	200	25	20

Application field solutions

Etching Process: Electrostatically clamps the wafer while enabling precise temperature control, preventing displacement and warping, and improving etch uniformity and yield.

Thin-Film Deposition (CVD/PVD): Provides stable wafer support and uniform thermal control, minimizing temperature gradients and ensuring consistent film thickness and composition.

Ion Implantation Process: Uses non-contact electrostatic chucking with temperature control to reduce contamination and defects, enhancing device performance and stability.