Compound Semiconductor Single Crystal Growth (such as SiC and GaN): Serves as a core heating element in PVT and VGF crystal growth furnaces, providing a stable heat source in ultra-high-temperature environments above 2000°C.

High-Temperature Epitaxy and MOCVD Equipment: Used as heating modules in epitaxial growth furnaces for LEDs and power semiconductors, delivering a uniform and stable temperature field in the 1000–1600°C process range.

Special Material Sintering and Vacuum Heat Treatment: Applied as a high-temperature heating source in vacuum or inert-atmosphere sintering furnaces for ceramics, cemented carbides, and refractory metals, enabling oxidation-free and contamination-free thermal processing.