Excellent Thermal Conductivity
Uniform Coating Thickness and High Surface Flatness
Strong Corrosion Resistance
Good Thermal Expansion Compatibility with Graphite, Ensuring Strong Adhesion
| Property | Unit | Value |
|---|---|---|
| Density | g/cm³ | 3.2 |
| Decomposition Temperature | °C | 2700 |
| Hardness (HK) | HK | 2800 |
| Electrical Resistivity | Ω·m | 0.2 |
| Flexural Strength | MPa | 470 |
| Young’s Modulus | GPa | 460 |
Silicon Epitaxial Substrates: Provide a low-defect, high-thermal-conductivity support platform, ensuring uniform epitaxial layer growth and efficient heat dissipation.
Single-Crystal Silicon Manufacturing Equipment Components: Used as crucible liners, flow-guiding, and thermal insulation structures. They offer high-temperature and corrosion resistance, preventing contamination of molten silicon.
MOCVD Substrates: Used as base substrates for GaN and other epitaxial growth processes, directly influencing the quality and performance of epitaxial layers.
Heater Components: Applied in high-temperature heating systems to provide a uniform and stable heat source.
Heat Sink Components: Used for rapid heat conduction and dissipation to maintain stable equipment temperatures.
Anti-Oxidation Components: Used for protection in high-temperature oxidative environments, reducing oxidation-related material degradation.
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