| Property | Unit | Value |
|---|---|---|
| Density | g/cm³ | 2.52 |
| Lattice Constant | Å | a = 2.5, c = 4.3 |
| Flexural Strength | MPa | 400 |
| Young’s Modulus | GPa | 450–470 |
| Thermal Conductivity | W/(m·K) | 42 |
| Thermal Expansion Coefficient | K⁻¹ | 5×10⁻⁶ |
| Electrical Resistivity | Ω·cm | 0.1–10 |
| Vickers Hardness | GPa | 38 |
| Melting Point | °C | 2450 |
Plasma Etching Equipment: Used as a replacement for silicon carbide (SiC) etch rings in plasma etching systems.