TaC Coated Graphite Crucible: A crucible made from high-purity graphite substrate with a tantalum carbide (TaC) coating deposited via vapor deposition. It retains the excellent thermal conductivity and high-temperature resistance of graphite, while the TaC coating provides high hardness, strong chemical inertness, and superior erosion resistance. It can withstand temperatures above 2000°C and effectively prevents reactions between the graphite substrate and process materials, reducing contamination. It is suitable for demanding applications such as molten metal melting and high-temperature synthesis processes.
Compound Semiconductor Single Crystal Growth (e.g., Silicon Carbide SiC, Gallium Nitride GaN): Used as a core container in high-temperature crystal growth furnaces (such as PVT and VGF methods). It operates in ultra-high-temperature environments above 2000°C to hold high-purity silicon, carbon, or metal precursors for the growth of high-quality semiconductor single crystals.
MOCVD / Epitaxial Equipment High-Temperature Components: Applied as high-temperature load-bearing containers or reactor chamber components in epitaxial growth systems for LEDs and power semiconductors. It resists corrosive gases and plasma erosion, reducing particle generation and contamination.
High-Temperature Alloy and Refractory Metal Melting: Used for vacuum or inert-atmosphere melting of reactive metals such as titanium alloys, niobium, tantalum, and rhenium.
