TaC Coating

Tantalum carbide (TaC) coating is a high-performance ceramic coating known for its exceptional hardness, wear resistance, and corrosion resistance. Its hardness is close to that of diamond, enabling strong resistance to abrasion, scratching, and chemical attack, making it an ideal solution for applications in extreme operating environments.

Characteristic

High Purity (99.999%): Dense coating surface with excellent high-temperature resistance.

Excellent Acid and Alkali Corrosion Resistance: Resistant to hydrogen (H₂), ammonia (NH₃), silane (SiH₄), and silicon (Si), providing reliable protection in harsh chemical environments.

Strong Resistance to Plasma Etching: Withstands corrosive process chemistries (e.g., chlorine, bromine), dopants (e.g., boron, phosphorus, arsenic), and aggressive cleaning agents.

Good Thermal Shock Resistance and Strong Coating Adhesion

Parameter

Property	Unit	Value
Density	g/cm³	14.3
Melting Point	°C	3880
Lattice Constant	Å	4.454
Hardness	HK	2000
Thermal Conductivity (25°C)	W/(m·K)	22–25
Thermal Conductivity (100°C)	W/(m·K)	15–18
Thermal Expansion Coefficient	K⁻¹	6.29×10⁻⁶
Young’s Modulus	GPa	291
Electrical Resistivity	Ω·cm	1×10⁻⁵

Application field solutions

Key Components for SiC Single Crystal Growth (PVT Method)

GaN Wafer Carrier: Provides support, positioning, and fixation for GaN wafers, serving as the substrate base during MOCVD, MBE epitaxial growth, etching, and deposition processes.

Gas Flow Guide Ring: Controls and directs gas flow distribution within the process chamber, optimizing flow patterns, preventing turbulence or local non-uniformity, and ensuring process uniformity.

TaC Coated Graphite Susceptor for MOCVD Epitaxy.

TaC Coated Graphite Heater for MOCVD Equipment.