Heating Plate

Aluminum nitride (AlN) ceramic heater is a heating device used for semiconductor material processing. It offers excellent thermal conductivity and high-temperature resistance, enabling stable operation under elevated temperatures. AlN ceramic heaters play an important role in semiconductor manufacturing processes and are widely used in crystal growth, annealing, and baking applications.

Characteristic

High Thermal Conductivity

Excellent Temperature Uniformity

Good Durability in Plasma Environments

Thermal Expansion Coefficient Close to Silicon

Parameter

Property	Unit	Value
Thermal Conductivity	W/(m·K)	170–230
Maximum Operating Temperature	°C	1600
Temperature Uniformity	°C	±1
Thermal Expansion Coefficient	K⁻¹	4.0×10⁻⁶ – 4.7×10⁻⁶

Application field solutions

CVD (Chemical Vapor Deposition): Used as wafer heating and carrier components, providing a uniform and stable high-temperature environment to ensure film deposition consistency while preventing contamination and electrical interference.

PECVD (Plasma-Enhanced Chemical Vapor Deposition): Used for precise wafer temperature control and heating, improving plasma deposition uniformity. It offers strong resistance to plasma corrosion and prevents localized overheating.

ALD (Atomic Layer Deposition): Provides high-precision temperature control and fast thermal response, ensuring atomic-scale deposition uniformity and preventing contamination or unwanted precursor reactions.

Photolithography Equipment: Used as a wafer temperature control platform to ensure stability during coating, exposure, and development processes, reducing pattern deviation.

Ion Implantation Equipment: Used for wafer electrostatic chucking and temperature control, preventing thermal deformation during ion implantation while minimizing contamination.