Conference Background Indium phosphide (InP), a core substrate material for second-generation compound semiconductors, is an indispensable material for distributed feedback (DFB) lasers, electro-absorption modulated lasers (EMLs), and avalanche photodiode (APD) detector chips. It enables optoelectronic conversion in the 1,310 nm and 1,550 nm telecommunications bands and plays a central role in optical interconnects for AI…Continue reading Notice on Convening the 2026 Forum on Indium Phosphide Material Preparation Technology and Industrial Development