Uniform coating thickness.
Purity of 99.999%, dense coating surface, and high temperature resistance.
Resistant to acid and alkali corrosion, as well as hydrogen (H₂), ammonia (NH₃), silane (SiH₄), and silicon (Si), providing reliable protection in harsh chemical environments.
Withstands plasma etching chemicals (e.g., chlorine, bromine), dopants (e.g., boron, phosphorus, arsenic), and corrosive cleaning agents.
Excellent thermal shock resistance and strong coating adhesion.
| Property | Unit | Value |
| Density | g/cm³ | 14.3 |
| Melting Point | °C | 3880 |
| Lattice Constant | nm | 0.4454 |
| Hardness | HK | 2000 |
| Thermal Conductivity | W/(m·K) | 22-25 (at 25℃) |
| W/(m·K) | 15-18 (at 100℃) | |
| Coefficient of Thermal Expansion | K⁻¹ | 6.29×10⁻⁶ |
| Elastic Modulus | GPa | 291 |
| Resistivity | Ω·cm | 1×10⁻⁵ |
Key components for SiC single crystal growth by PVT method, GaN wafer susceptor, guide ring, key thermal field components for MOCVD epitaxial wafer, silicon single crystal susceptor.
No. 88, Nanhuan East Road, Yucheng City, Shandong Province
