| Property | Unit | Value |
|---|---|---|
| Crystal Structure | — | Hexagonal system (α, β-phase) |
| Density | g/cm³ | 3.2–3.3 |
| Mohs Hardness | — | 8–9 |
| Flexural Strength | MPa | 600–1000+ |
| Fracture Toughness (KIC) | MPa·m¹/² | 5–8 |
| Melting / Decomposition Point | °C | Decomposes at 1900°C (at atmospheric pressure) |
| Maximum Service Temperature | °C | 1200–1400 (in air) |
| Thermal Conductivity (20°C) | W/(m·K) | 15–30 |
| Thermal Expansion Coefficient | K⁻¹ | 3.0×10⁻⁶ – 3.5×10⁻⁶ |
| Volume Resistivity (20°C) | Ω·cm | 10¹³–10¹⁵ |
| Dielectric Constant (1 MHz) | — | 8.0–9.5 |
Equipment Components: Key components for epitaxial equipment, wafer carrier parts, and protective components.
Semiconductor Manufacturing: High-temperature insulating components, heat dissipation substrates, and protective parts for plasma etching processes.
