PBN Coating

Pyrolytic boron nitride (PBN) is an advanced inorganic non-metallic material produced through a pyrolysis reaction at extremely high temperatures. It has a graphite-like layered structure and offers advantages such as high hardness, mechanical strength, high purity, low friction coefficient, high-temperature resistance, and excellent electrical insulation.

Characteristic

High Purity and Density: Purity up to 99.999% or higher, dense and non-porous surface, excellent airtightness, and helium permeability as low as 1×10⁻¹⁰ cm³/s.

High-Temperature Resistance and Thermal Performance: Withstands high temperatures up to 2200℃, and its strength increases with rising temperature. It has excellent thermal shock resistance and anisotropic thermal conductivity (60 W/(m·K) in the a-direction at 200℃, and only 2.60 W/(m·K) in the c-direction).

Chemical Inertness: Resistant to corrosion by acids, alkalis, salts and organic reagents; non-wetting and non-reactive with most molten metals and semiconductor materials.

Electrical and Special Properties: High resistivity (2.4×10¹⁵ Ω·cm), high dielectric strength (56 kV/mm at room temperature), low dielectric constant and dielectric loss tangent, as well as good microwave and infrared transmission performance.

Anisotropy and Mechanical Properties:Shows significant anisotropy in mechanical, thermal and electrical properties; tensile strength is 102 N/mm², and flexural strength is 243 N/mm².

Parameter

Performance Performance Unit Value
Density Density g/cm³ 1.95-2.20
Tensile Strength Tensile Strength N/mm² 102
Flexural Strength Flexural Strength N/mm² 243
Compressive Strength Compressive Strength N/mm² 244
Thermal Conductivity (at 200℃) W/(m·K) 60 (a-direction); 2.60 (c-direction)
Coefficient of Thermal Expansion (at 200℃) T.α/(1/K) 2.0×10⁻⁶ (a-direction)
Dielectric Constant (Room Temperature) Dielectric Constant (Room Temperature) / 5.81
Resistivity Resistivity Ω·cm 2.4×10¹⁵

Application field solutions

1.Semiconductor Crystal Growth: Used as crucibles for the growth of III-V compound semiconductor single crystals (such as GaAs, InP, GaP) via LEC (Liquid Encapsulated Czochralski), VGF (Vertical Gradient Freeze), VB (Vertical Bridgman) and MBE (Molecular Beam Epitaxy) methods. Its high purity and chemical inertness prevent melt contamination.

2.OLED Evaporation Sources: Applied as evaporation crucibles and support frames in OLED production, providing high insulation, high-temperature stability and no outgassing.

3.High-Temperature Protective Coatings: Provides PBN coatings for graphite heaters, graphite crucibles, etc., to prevent high-temperature volatilization and contamination.

4.Special Metallurgy and Melting: Serves as crucibles for high-purity metal evaporation coating and melting, withstanding various molten metals without reaction.

5.Electronic Devices and Windows: Used for traveling wave tube (TWT) support rods, MOCVD (Metal-Organic Chemical Vapor Deposition) insulating plates, and infrared/microwave transmission windows, leveraging its insulation, wave transmission and high-temperature stability.

6.Aerospace and Vacuum Equipment:Functions as insulating components in high-temperature vacuum furnaces and high-temperature insulating fluid nozzles, meeting the requirements of heat insulation, insulation and structural stability in extreme environments.

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