Al₂O₃ - Aluminum Oxide

High-purity alumina (Al₂O₃) precision ceramic parts dedicated to semiconductor manufacturing are produced using high-purity raw materials and advanced ceramic processing technologies, meeting the stringent requirements for cleanliness, high insulation, high-temperature resistance, and plasma corrosion resistance in wafer fabrication processes.

Characteristic

High purity

Excellent high-temperature insulation

Plasma corrosion resistance

Excellent high-temperature resistance

Good thermal shock resistance

Parameter

Property Unit Value
Density g/cm³ 3.6 – 3.9
Mohs Hardness 9
Flexural Strength MPa 300 – 400
Compressive Strength MPa 2000 – 3000
Melting Point °C 2050
Maximum Service Temperature °C 1500 – 1750
Thermal Conductivity (20°C) W/(m·K) 18 – 36
Coefficient of Thermal Expansion ×10⁻⁶/K 7.0 – 8.0
Volume Resistivity (20°C) Ω·cm >10¹⁴
Dielectric Strength kV/mm 10 – 35
Dielectric Constant (1MHz) 9 – 10

Application field solutions

Used in wafer manufacturing equipment as electrical insulation structures and chamber protection components featuring high temperature resistance and plasma corrosion resistance.
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