AIN - Aluminum Nitride

With excellent thermal conductivity, electrical insulation, and a thermal expansion coefficient close to that of silicon, it is widely used in various heat-dissipating components and related parts of semiconductor manufacturing equipment.

Characteristic

High purity, high temperature resistance, and high mechanical strength

High thermal conductivity and low coefficient of thermal expansion

Excellent electrical insulation and low dielectric constant

Excellent corrosion resistance to molten metals

Parameter

Property Unit Value
Density g/cm³ 3.26
Mohs Hardness 7 – 8
Flexural Strength MPa 300 – 400
Melting Point °C >2200 (decomposes in N₂)
Maximum Service Temperature °C ~1350 (in air)
Thermal Conductivity (20°C) W/(m·K) 140 – 180
Coefficient of Thermal Expansion ×10⁻⁶/K 4.5 – 5.0
Volume Resistivity (20°C) Ω·cm >10¹⁴
Dielectric Strength kV/mm 15 – 20
Dielectric Constant (1MHz) 8.5 – 9.0

Application field solutions

High-power LED substrates, integrated circuit packaging substrates and heat sinks, semiconductor equipment components, laser diode heat sinks, high-temperature crucibles, electronic insulators, etc.

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