Wafer Boat: Made from a high-purity isostatically pressed graphite substrate with a pyrolytic graphite (PG) coating. It features excellent high-temperature resistance, an ultra-low thermal expansion coefficient, and strong chemical inertness. It operates stably in semiconductor high-temperature processes without releasing metal ions that could contaminate wafers. Its high thermal conductivity ensures uniform wafer heating, improving process consistency and repeatability.
Annealing Process:
Used for high-temperature heat treatment of wafers to relieve internal stress, improve crystal structure, and enhance electrical and mechanical properties.
Epitaxial Growth:
Particularly suitable for the epitaxial growth of third-generation semiconductors such as SiC. It supports wafers in high-temperature, hydrogen-rich environments, ensuring uniform epitaxial layer deposition and improved crystal quality.
Diffusion Process:
Used as a wafer carrier during dopant diffusion processes, enabling impurity atoms to diffuse uniformly into the wafer at elevated temperatures and form the desired electrical properties.
Atomic Layer Deposition (ALD):
Provides stable wafer support during high-precision thin-film deposition processes, enabling the uniform growth of atomic-scale multilayer films and ensuring excellent film consistency.
