Made from isostatic graphite with a purity of over 99.9%, it features high-temperature resistance up to 2800 °C, an ultra-low coefficient of thermal expansion, and strong chemical inertness. It can operate stably in high-temperature semiconductor processes without releasing metal ions that could contaminate wafers. Its high thermal conductivity ensures uniform wafer heating, guaranteeing process consistency.
Applications:
Epitaxial Growth：Especially suitable for the epitaxial growth of third-generation semiconductors such as SiC, the process boat holds wafers in high-temperature, hydrogen-containing atmospheres to enable uniform epitaxial layer deposition.
Diffusion Processes：Supports wafers during impurity diffusion, allowing dopant atoms to evenly penetrate the wafer at high temperatures, forming regions with the desired electrical properties.
Annealing Processes：Holds wafers during high-temperature thermal treatment to relieve internal stresses, improve crystal structure, and enhance both electrical and mechanical performance.
Atomic Layer Deposition (ALD)：Used in high-precision thin-film deposition processes to carry wafers for uniform growth of multi-layer atomic-scale films.
No. 88, Nanhuan East Road, Yucheng City, Shandong Province
