MBE Crucible (Molecular Beam Epitaxy Crucible) is primarily used as a source crucible in molecular beam epitaxy (MBE). It holds evaporative elements and compounds, enabling this precise thin-film deposition technique, where atomic or molecular beams are directionally directed onto a substrate under ultra-high vacuum to grow high-quality single-crystal thin films.
Applications:
Source Material Containment and Evaporation：Holds semiconductor materials such as Ga, As, and In, which are evaporated or sublimated under ultra-high vacuum using heating to form directed atomic or molecular beams.
Ensuring Precise Film Composition：Provides stable support for high-purity materials, compatible with precise temperature control and beam flux regulation, ensuring uniform atomic/molecular beam composition and laying the foundation for high-quality single-crystal thin-film growth.
Supporting Multi-Component Film Growth：Can be used with crucibles of various sizes to hold different source materials, enabling the growth of multi-component, multi-layer heterostructure films for complex semiconductor device architectures.
Compatible with Ultra-High Vacuum Conditions：Made from high-purity materials that remain stable under ultra-high vacuum and high-temperature conditions, releasing no impurities and maintaining a clean growth environment.
No. 88, Nanhuan East Road, Yucheng City, Shandong Province
