SiC – CVD Silicon Carbide – 山东国晶新材料有限公司

SiC - CVD Silicon Carbide

SiC coating products are thin layers applied to sensors using the chemical vapor deposition (CVD) process. Compared to silicon, silicon carbide materials offer multiple advantages, including 10 times the breakdown electric field strength and 3 times the bandgap, endowing the material with high temperature resistance, chemical resistance, excellent wear resistance, and thermal conductivity.

Characteristic

Excellent thermal conductivity

Uniform coating thickness and high flatness

Excellent corrosion resistance

Good matching of thermal expansion coefficient with graphite and strong bonding strength

Parameter

Performance	Unit	Value
Density	g/cm³	3.2
Decomposition Temperature	°C	2700
Hardness	HK	2800
Resistivity	Ω·m	0.2
Bending Strength	MPa	470
Young’s Modulus	GPa	460

Application field solutions

Substrates for silicon epitaxial growth, monocrystalline silicon manufacturing equipment, MOCVD substrates, heaters, heat sinks, and oxidation-resistant components.

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