Beam Source Loading and Evaporation: Holds semiconductor materials such as Ga, As, and In. Under ultra-high vacuum conditions, the materials are heated to evaporate or sublimate, forming directed atomic or molecular beams.

Precise Thin-Film Composition Control: Provides stable containment of high-purity source materials and supports precise temperature control and beam flux regulation, ensuring uniform atomic/molecular beam composition for high-quality epitaxial film growth.

Compatibility with Multi-Material Thin-Film Growth: Compatible with multiple crucible sizes for different source materials, enabling multi-component and multi-layer heterostructure film growth to meet complex semiconductor device requirements.

Ultra-High Vacuum Compatibility: Made from high-purity materials that remain stable under ultra-high vacuum and high-temperature conditions, without releasing impurities, ensuring a clean growth environment.